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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors
저자
Chernikova A.G.,Kozodaev M.G.,Khakimov R.R.,Polyakov S.N.,Markeev A.M.
학술지명
Applied Physics Letters
출판/발행연도
2020
주제
요약
본 연구는 원자층 증착(ALD)으로 성장한 Hf0.5Zr0.5O2 (HZO) 및 La-doped Hf0.5Zr0.5O2 (HZLO) 기반 강유전체 커패시터에 대한 초박형 Ru 바닥 전극의 영향을 보고합니다. Ru 바닥 전극은 HZO 및 HZLO 커패시터의 잔류 분극을 크게 향상시키며, 이는 Ru 표면의 높은 거칠기로 인해 조기 절연 파괴가 발생할 수 있음을 보여줍니다.
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