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논문 목록
Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering
저자
Kim T.,Kim J.K.,Yoo B.,Xu H.,Yim S.,Kim S.H.,Yu H.Y.,Jeong J.K.
학술지명
Journal of Materials Chemistry C
출판/발행연도
2019
주제
요약
본 연구는 p형 산화주석 전계 효과 트랜지스터(SnO FET)의 낮은 전류 변조비 문제를 해결하기 위해 금속-반도체 접촉 구조를 적용하여 누설 전류를 억제하고 성능을 향상시켰습니다. 초박형 중간층을 사용하여 Fermi-level pinning 현상을 완화하고, 결과적으로 누설 전류를 20배 감소시키고 전류 변조비를 10배 증가시키는 데 성공했습니다.
학술지 영향력
[Journal of Materials Chemistry C]
- CiteScore
- 9.3
- ES
- 0.07436
- JCI
- 0.98
- JCR
- 5.2
- SJR
- 1.220
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