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Development of SnSe thin films through selenization of sputtered Sn-metal films
저자
Pallavolu, Mohan Reddy; Minnam Reddy, Vasudeva Reddy; Guddeti, Phaneendra Reddy; Park, Chinho
학술지명
Journal of Materials Science: Materials in Electronics
출판/발행연도
2019
주제
요약
본 연구에서는 스퍼터링된 주석 금속 박막의 셀레나이드화를 통해 두께 0.72–1.00 μm의 주석 셀레나이드(SnSe) 박막을 제조하였다. 400°C 이상에서 단일상 오쏘롬빅(OR)-SnSe 박막이 형성되었으며, 400°C에서 셀레나이드화된 박막은 Se/Sn 비율 0.99, 1.2 eV의 밴드갭 에너지, 12.71 Ω cm의 전기 저항률, 2.03 cm² V⁻¹ s⁻¹의 이동도, 2.42 × 10¹⁷ cm⁻³의 캐리어 농도를 나타냈다.
학술지 영향력
[Journal of Materials Science: Materials in Electronics]
- CiteScore
- 5.1
- ES
- 0.03283
- JCI
- 0.56
- JCR
- 2.8
- SJR
- 0.529
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